Biopolymer-based trimetallic nanocomposite synthesis,characterization and its application in the catalytic degradation of 4-nitrophenol

Journal of Materials Science: Materials in Electronics - Gum kondagogu (GK), a natural biopolymer was successfully employed in the synthesis of trimetallic (AgAuPd) nanocomposites and characterized...     

Cu掺杂对有序Sr3YCo4-xCuxO10.5+δ多晶的结构与物理性能的影响

采用固相反应法制备了四方Sr3YCo4-xCuxO10.5+δ(x=0~1.0)多晶。用热重-差示扫描量热分析,X射线衍射研究了多晶的有序化相变及结构。在固溶范围内(x=0~0.4),观察到有序峰(103)和(215),说明四方Sr3YCo4-xCuxO10.5+δ多晶为超结构,这是由于合成时在1000℃以上发生了吸氧(δ)有序化相变；当x=0.6~1.0时,978℃时在晶界处形成了单斜杂相,破坏了Sr3YCo4-xCuxO10.5+δ多晶的有序。当x=0~0.4时,多晶呈半导体输运行为。随着Cu掺杂量的增加,Co4+提供的空穴载流子浓度增大,电阻率明显下降；由于Cu的固溶,自旋熵增加,载流子浓度和自旋熵的共同作用使x=0~0.2多晶的热电势不变,x=0.4的热电势降低。并且Cu掺杂导致的晶格畸变使Co3+离子由高自旋态转变为高/低自旋混合态,磁化强度和铁磁转变温度(Tc)降低,磁结构由G-型反铁磁转变为铁磁。在进行二次烧结后,300K时电阻率明显降低,热电势为一次烧结的2倍,可能是二次烧结使多晶的有序化程度增大,提高了铁磁有序排列。     

子集模拟中马尔可夫链蒙特卡洛抽样算法比较

文章着重研究子集模拟中马尔可夫链蒙特卡洛(MCMC)抽样算法的抽样效率与计算精度。首先，阐述可靠度子集模拟的基本原理与中间状态样本生成的各种MCMC抽样算法，在稳态马尔可夫链构造基础上提出延迟拒绝MMH(Modified Metropolis Hasting)算法，通过在MMH算法上增加备选样本的延迟拒绝步提高MMH算法的抽样效率；阐述基于随机游走与基于扩散方程MCMC方法中建议分布的差异，进一步对备选样本接受率为1的preconditioned Crank-Nicolson(pCN)算法和条件抽样(Conditional sampling, CS)算法开展研究，证明两种算法的等价性；推导有效样本量的计算方法，提出采用有效样本量与总样本量的比值定义MCMC方法的抽样效率。通过复杂目标分布的样本生成研究不同MCMC抽样算法建议分布及其参数对备选样本接受率与抽样效率的影响，最后通过计算实例研究子集模拟过程采用不同MCMC抽样算法得到失效概率的相对误差及其变异性，揭示不同MCMC抽样算法对失效概率计算精度的影响。研究表明：不同MCMC抽样算法生成备选样本的接受率及其自相关性受建议分布及其参数影响较大，对于复杂的目标分布，pCN算法和CS算法的抽样效率较高，延迟拒绝MMH算法次之；采用CS算法和延迟拒绝MMH算法进行子集模拟得到的失效概率精度较高且变异性较低；增加子集模拟中间状态样本量可以提高失效概率计算精度并降低其变异性。     

Impression creep behavior of different zones in friction stir welded Mg–Zn–Mn wrought alloy

The friction stir welded joint of wrought ZM21 alloy was divided into five parts, and their localized creep behavior was studied via the impression method. The tests were carried out in the stress range of 300–450 MPa (σ_imp/G ≈ 0.02–0.03) and in the temperature range of 448–523 K. Optical and SEM micrographs and EDS taken before and after the impression tests were used to study the microstructure of various zones of the FS welded joint. Power law was found to satisfactorily relate the stress and strain rates. The steady-state impression velocity was found to vary significantly between the advancing and retreating sides of TMAZ and HAZ. For TMAZ, the creep exponent on the AS was 4.8, and on the RS, it was 7.8. The activation energy on the AS was ~?133 kJ/mol, and on the RS, it was ~?101 kJ/mol. Similarly, for HAZ, the creep exponent on the AS was found to be 5.5 and on the RS, it was 4.9. The activation energy on the AS was ~?86 kJ/mol and on the RS, it was ~?232 kJ/mol. The cross-over of steady-state impression velocity of different zones indicates that the weak zone was temperature and stress dependent. Within the stresses and temperatures studied, the weld zone's creep resistance (i.e., lower minimum impression velocity) was found to be better than the base material. As it is with most magnesium alloys, dislocation climb was found to be the operative mechanism in the FS weldments of ZM21 alloy. The rate-controlling mechanism remains to be identified because the wide variation in n and Q values suggests that different creep mechanisms are in operation in different zones.

Graphical abstract

     

Annealing temperature-dependent structural and electrical properties of (Ta2O5)1-x - (TiO2)x thin films,x ≤ 0.11

(Ta₂O₅)_1-x- (TiO₂)_x (TTO_x) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta₂O₅ structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal– oxide– semiconductor (MOS) structures of Ag/TTO_x/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTO_x films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10^?5 to 10^?8 A cm^?2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 × 10^?8 A cm^?2, at the electric field of 3.5 × 10⁵ V cm^?1, show preferred potential as a dielectric for high-density silicon memory devices.